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基于深亚微米CMOS工艺输出单元电路研究
Output Cell based on submicron CMOS Technology
【摘要】 详细分析了一种基于深亚微米CMOS工艺输出单元电路结构,并对其三个基本模块:输出驱动、电源噪声抑制和ESD保护进行了深入研究。综合考虑速度、功耗和芯片面积等因素,输出驱动采用两级反相器结构,同时根据短沟道理论,提出了确定器件尺寸的方法;对于电源噪声抑制和ESD保护电路,重点探讨了其工作原理和具体实现方法。Spectre仿真结果表明,输出单元电路能够显著抑制SSO噪声。该电路已成功应用于所研制的CMOS图像传感器中。
【Abstract】 The structure of an output cell circuit based on submicron CMOS technology is discussed in this paper,and three main parts:the output buffer,SSO noise suppression and ESD protection,are studied in details,respectively.For output buffer module,according to requirements on speed,power and area, two-stage inverter is used and sizes of MOSFETs are determined artificially based on short channel theo- ry.For noise suppression module and ESD protection module,mechanisms are analyzed thoroughly.Sim- ulation with Spectra shows that the output cell can suppress SSO noise significantly.It has been success- fully used in CMOS image sensors we developed.
【Key words】 I/O cell; output buffer; SSO noise suppression; ESD protection;
- 【文献出处】 核电子学与探测技术 ,Nuclear Electronics & Detection Technology , 编辑部邮箱 ,2008年06期
- 【分类号】TN432
- 【下载频次】65