节点文献
基于RC网络集成电路的多晶硅薄膜电阻工艺优化
OPTIMIZATION PROCESS OF POLY-SILICON THIN-FILM RESISTOR IN RC NETWORK IC
【摘要】 介绍基于RC[1]网络集成电路中的制作多晶硅电阻工艺和掺杂方法,并详细阐述了这种方法的工艺过程和控制方式.利用LPCVD方式制作多晶硅薄膜,可以得到很好的膜层均匀性和最佳的淀积速率,再利用POC l3进行高温掺杂[2],得到优化的电阻率,灵活改变各种参数,可使电阻的精度优于5%.
【Abstract】 Thin-film resistors made of poly-silicon show better precision and stability,greatly enhancing the flexibility of the process.This paper introduces the fabrication and doping method of poly-silicon resistors in RC network ICs,and describes in detail the process and control mode of this method.We get a better uniformity in film thickness and an optimal deposition rate,which the poly-silicon thin film made by LPCVD.Then,Combined with high-temperature POCL3 doping,as well as flexible parameters adjusting,an optimal resistivity can be achieved,and the tolerance of poly-silicon thin film resistor is less than 5%.
【Key words】 Poly-silicon; RC network; Doping process; Thin-film resistor;
- 【文献出处】 哈尔滨师范大学自然科学学报 ,Natural Science Journal of Harbin Normal University , 编辑部邮箱 ,2008年05期
- 【分类号】TN305
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