【摘要】 采用高温溶液生长法生长铁电Bi4-xNdxTi3O12(BNdT)单晶,并研究了BNdT的结构和电学性能.XRD结构精修的结果表明Nd掺杂将导致晶格常数和晶胞体积发生变化,铁电性能的测试表明Nd掺杂降低了BNdT单晶的剩余极化,BNdT的自发极化的估算和铁电测量结果有着相同的变化趋势.Nd的A位掺杂同时也导致BNdT单晶沿各个方向漏电流密度的减小,而由于(Bi2O2)2+层的存在,BNdT单晶沿c方向显示出更低的漏电流密度.更多还原

【Abstract】 Ferroelectric Bi4-xNdxTi3O12(BNdT) single crystals were obtained in high temperature solution.Their structure and electric properties were investigated.XRD results indicate that Nd-substitution leads to some variation in lattice constant and unit volume.Ferroelectric measurements results show that Nd-doping results in a decrease in remnant polarization,in agreement with the estimation of spontaneous polarization.Nd substitution also leads to a decease in the leakage current of the crystals.BNdT single crystals exhibit low Leakage current along c-axis because of the existance of(Bi2O2)2+ layer.更多还原