【摘要】 采用直流电化学腐蚀的方法在不同电流密度下制备了多孔硅样品.用SEM,FTIR,PL谱研究了制备样品的结构和发光特性.结果表明,多孔硅样品的发光强度和峰位与电流密度存在密切关系,制备的多孔硅存在378,470,714 nm的光致发光,对这几个发光峰的发光机理进行了讨论.更多还原

【Abstract】 Porous silicon(PS) samples were prepared by DC electrochemical etching of p-silicon wafers under different current density.The microstructure of the PS was observed by the scanning electron microscopy(SEM).The chemical structure of the PS is measured by Fourier transformation infrared spectroscopy(FTIR).Its photoluminescence(PL) spectra were measured by fluorescence spectrometer.The results indicate that the intensity and the position of light emissions is related with etched current density.Three peaks were observed located at 378,470 and 714 nm,respectively.The mechanism of three light emissions was discussed in detail.更多还原