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Impact of propagation effects on intersubband Rabi flopping in semiconductor quantum wells

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【作者】 周旭升崔妮祖继锋龚尚庆

【Author】 Xusheng Zhou Ni Cui Jifeng Zu Shangqing Gong Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800

【机构】 Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences

【摘要】 <正>We investigate intersubband Rabi flopping in modulation-doped semiconductor quantum wells with and without the propagation effects,respectively.It is shown that propagation effects have a larger impact on Rabi flopping than the nonlinearities rooted from electron-electron interactions in multiple quantum wells. By using ultrashortπpulses,an almost complete population inversion exists if the propagation effects are not considered;while no complete population inversion occurs in the presence of propagation effects. Furthermore,the magnitude of the impact of propagation effects may be controlled by varying the carrier density.

【Abstract】 We investigate intersubband Rabi flopping in modulation-doped semiconductor quantum wells with and without the propagation effects,respectively.It is shown that propagation effects have a larger impact on Rabi flopping than the nonlinearities rooted from electron-electron interactions in multiple quantum wells. By using ultrashortπpulses,an almost complete population inversion exists if the propagation effects are not considered;while no complete population inversion occurs in the presence of propagation effects. Furthermore,the magnitude of the impact of propagation effects may be controlled by varying the carrier density.

【基金】 the National Natural Sciences Foundation of China under Grant No.60708008.
  • 【文献出处】 Chinese Optics Letters ,中国光学快报(英文版) , 编辑部邮箱 ,2008年09期
  • 【分类号】O471.1
  • 【下载频次】26
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