节点文献
12~15GHz 5W GaAs宽带内匹配功率管及其应用
12~15 GHz 5-Watt GaAs Broadband Internally Matched Transistor and Applications
【摘要】 报道了一种新型的砷化镓宽带高效内匹配功率放大器,它采用集总参数与分布参数相混合的匹配电路形式,取用南京电子器件研究所研制的12 mm功率PHEMT管芯,研制的内匹配功率放大器在12~15 GHz频带内,输出功率大于5 W,功率增益大于6 dB,相对带宽为25%,典型功率附加效率为25%。
【Abstract】 A new GaAs broadband and high efficient internally matched power amplifier is reported in this paper.The coexistant technology of the lumped and distributed components is used.Using one 12 mm power PHEMT transistor made by Nanjing Electronic Devices Institute,the amplifier demonstrates an output power of more than 5W with a power gain of over 6 dB and relative wideband of 25% and the typical PAE of 25% across the band of 12~15 GHz.
- 【文献出处】 固体电子学研究与进展 ,Research & Progress of SSE Solid State Electronics , 编辑部邮箱 ,2008年03期
- 【分类号】TN722.75
- 【被引频次】2
- 【下载频次】159