【摘要】 在等离子体增强化学气相淀积(PECVD)系统中,采用等离子体氧化和等离子体氮化的方法,在单晶硅表面上成功制备厚度小于10nm的超薄硅基介质膜。通过X射线光电子谱(XPS)分析了超薄介质膜的化学结构,利用椭圆偏振仪测量了厚度以及折射率,同时对超薄介质膜进行了电容电压(C-V)和电流电压(I-V)特性的测量,研究其电学性质,探讨了C-V测量模式对超薄介质膜性质表征的影响,最后对两种介质膜的优缺点进行了比较。更多还原

【Abstract】 Ultra thin dielectric films(thickness<10 nm)based on Si wafer are fabricated by using the plasma oxidation and nitridation techniques in a plasma enhanced chemical vapor deposition(PECVD)system.The chemical composition,thickness,and refractive index are characterized by X-ray photoelectron spectroscopy(XPS)and ellipsometer respectively.The electronic properties are investigated by capacitance-voltage(C-V)and current-voltage(I-V)measurements.The advantages and disadvantages of these two kinds of Si based ultra thin dielectric films are compared and discussed.更多还原