【摘要】 在N2/O2气氛中,使用Ti、Hf靶共反应溅射在衬底Si上淀积一种新型栅介质材料HfTiON,随后分别在N2气氛中600°C和800°C退火2min。电容电压(C-V)特性和栅极漏电流特性测试结果表明,800°C快速热退火(RTA)样品表现出更低的界面态密度、更低的氧化物电荷密度和更好的器件可靠性,这是由于在800°C下的RTA能有效地消除溅射生长过程中导致的损伤,形成高质量、高可靠性的介质/Si界面。更多还原

【Abstract】 A new gate dielectric material,HfTiON,is deposited by reactive co-sputtering of Hf and Ti targets in N2/O2 ambient,followed by anneal in N2 at 600 °C and 800 °C respectively for 2 mins.Capacitance-voltage and gate-leakage properties are characterized and compared for different anneal conditions.The results indicate that the sample annealed at 800 °C exhibits lower interface-state and oxide-charge densities,and better device reliability.This is attributed to the fact that the rapid thermal annealing at the higher temperature of 800 °C can effectively remove the damage-induced precipitation,forming a hardened dielectric/Si interface with high reliability.更多还原