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电子辐照致VO₂（B）薄膜结构与红外光谱改变

Alteration in infrared spectrum and structure properties of VO₂（B） thin films due to electron irradiation

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【Author】 MENG Qing-kai,HE Jie,LIU Zhong-hua,ZHANG Lei,SONG Ting-ting,SUN Peng(Key Laboratory of Irradiation Physics and Technology for Ministry of Education, College of Physics Science and Technology,Sichuan University,Chengdu 610064,China)

【机构】四川大学物理科学与技术学院辐射物理及技术教育部重点实验室；四川大学物理科学与技术学院辐射物理及技术教育部重点实验室成都610064；成都610064；

【摘要】本文以能量为1.0 MeV的电子束辐照VO2(B)薄膜,对电子辐照在薄膜中产生的缺陷进行了理论计算,使用X射线衍射仪、傅立叶中红外光谱仪对薄膜进行测试,分析了电子辐照对薄膜结构与红外光谱(3400~400 cm-1)的影响。结果显示:电子辐照可以在薄膜中引入点缺陷并产生退火效应,电子辐照在薄膜中引入的点缺陷,可以使V-O=V受到破坏,退火可以使V-O=V振动得到恢复,而电子辐照对薄膜八面体角度弯曲振动影响不大。更多还原

【Abstract】 VO2(B) thin films were irradiated by electron beams with different doses.The defect induced by electron irradiation was calculated.Structural and infrared spectrum(3400～400 cm-1) characterization has been analyzed.As a result,the electron beams can induce defect effect and the anneal effect in the film.The V-O=V bonds can be altered by defect effect,the anneal effect can make V-O=V vibration comeback,the electron irradiation has a minimal impact on octahedron angle bend vibration.更多还原