【摘要】 通过优化分子束外延生长条件,得到室温发光在1300nm低密度的自组织InAs/GaAs量子点。使用极低的InAs生长速率(0.001单层/秒)可以把量子点的密度降低到4×106cm-2。这些结果使得InAs/GaAs量子点可以作为单光子源应用在未来的光纤基量子密码、量子通信中。更多还原

【Abstract】 The molecular-beam epitaxy growth conditions of self-assembled InAs/GaAs quantum dots(QDs) have been optimized to achieve a low density of dots emitting at 1300nm at room temperature.An ultralow InAs growth rate [0.001ML(monolayer)/s] is used to reduce the density to 4×106cm-2.With these results,InAs/GaAs QDs appear as a very promising system for future applications of single photon sources in fiber-based quantum crytography and quantum communications.更多还原