【摘要】 三层键合Glass-Silicon-Glass(GSG)结构在光MEMS、微惯性器件、微流体芯片、射频MEMS以及低成本圆片级封装技术领域里是一项重要技术。基于MEMS精密研磨抛光工艺和阳极键合,结合新型玻璃通孔的腐蚀工艺,开展了中间硅片厚度可控的三层阳极键合工艺研究,成功制备了带有通孔的GSG微流体器件。总厚度1360μm,中间硅片厚度60μm,通孔直径100μm,孔间距(圆孔的中心距离)200μm,孔内边缘圆滑无侧蚀。三层结构的键合几率为90%,为探索多层键合技术打下坚实基础。更多还原

【Abstract】 Triple-stack bonding of glass-silicon-glass(GSG) structure is an important process,which is primarily used in professional fields including optical MEMS、micro-inertial devices、micro-fluidic chip、RF MEMS and wafer-level packaging(WLP) with low-cost.The dissertation focuses on the exact grinding and polishing processing、anodic bonding and combining with novel glass via-hole etching technology.The study of triple-stack anodic bonding based on the controllable thickness of silicon between glasses has been developed and finally GSG micro-fluidic device have been made successfully.The thickness of the whole chip and in-between silicon are 1360μm、60μm respectively.The diameter and space of via-hole(the space between the center of the hole)are 100μm、200μm respectively,and the parietal of the via-hole is smooth and non-etching side.The bonding rate of the triple-structure is 90%.更多还原