【摘要】 以混合的氧化锗粉和硅粉为原料,采用水热法在高温高压下制备出具有核-壳同轴结构的Ge/SiOx纳米电缆。扫描和透射电镜研究表明这种Ge/SiOx纳米同轴电缆的产量高,直径分布均匀,长度可达微米级,并证实其为非晶态SiOx包裹Ge内核的核-壳结构。Ge芯线沿着[211]方向生长。Ge/SiOx纳米同轴电缆的生长过程遵循气-液-固和氧化物辅助生长机制,与原料中GeO2与Si的比率有关。更多还原

【Abstract】 Ge/SiOx nanocables were synthesized by hydrothermal method,using GeO2 and Si powders as reactants.The product was characterized by scanning electron microscopy(SEM),transmission electron microscopy(TEM) with energy dispersion spectroscopy(EDS).The Ge/SiOx nanocables were obtained in large-scale,which had even diameters and the lengths of several hundred nanometers.It has been confirmed that the nanocables possessed the special structure of core-shell.Ge core was grown along a direction of .The growth of the Ge/SiOx nanocables was considered to occur via the combination of oxide-assisted growth and vapor-liquid-solid processes,and the fabrication of nanocables was determined by the ratio of GeO2 and Si powders.更多还原