【摘要】 对射频溅射功率80W条件下Ta缓冲层上生长的硅薄膜进行退火并用Raman散射和X射线衍射技术对样品的微观结构进行检测,系统研究了退火温度和退火时间对硅薄膜结晶性的影响。分析结果表明,在560℃退火2h或680℃退火1h之后,硅薄膜开始晶化,并且随着退火温度的增加或退火时间延长,薄膜逐渐由非晶向微晶转变。获得了可用于太阳能电池的微晶硅薄膜的最佳晶化参数。更多还原

【Abstract】 A series of silicon films have been fabricated on Tantalum buffers,then using Raman scattering and X-ray diffraction technique to test the microstructure of samples.The annealing temperatures and annealing time’s impact on the crystalline silicon thin films has been studied systematically,the experimental results show that the silicon films start to become crystalline after 2h annealing at 560℃ or one hour annealing at 680℃.Simultaneously,the experimental results also demonstrate that the structure of silicon films gradually transit from amorphous to microcrystalline with the increase of the annealing temperatures or the annealing time.Besides,we also obtain the optimization crystalline parameters of microcrystalline silicon for fabricating solar cells.更多还原