【摘要】 采用中频交流磁控溅射方法,在Mo层上沉积了CuInGa(CIG)预制膜。以N2为载气,采用固态硒化法制备获得了Cu(In1-xGax)Se2(CIGS)吸收层薄膜,考察了N2流量对CIGS薄膜结构和形貌的影响。采用SEM和EDS观察和分析了薄膜的表面形貌和成分,采用XRD表征了薄膜的组织结构。结果表明,在不同的N2流量下制备的CIGS薄膜,均具有单一的黄铜矿相结构,薄膜具有(112)面的择优取向。当Ar流量为0.40m3/h时,薄膜表面结构致密,晶粒大小均匀,并且Cu、In、Ga原子含量,处于制备弱p型CIGS薄膜的理想范围。更多还原

【Abstract】 In this work,CuInGa(CIG) precursors were deposited on the substrate of Mo-coated glass with middle frequency a.c.magnetron sputtering by alternately sputtering CuIn and CuGa targets.Then the Cu(In1-xGax)Se2(CIGS) absorbers were obtained by selenizing the CIG precursors in the atmosphere of Se vapor and carrier gas of N2.The CIGS films were characterized with X-ray diffraction,scanning electron microscopy,and energy dispersive spectroscopy to evaluate the microstructure,morphology,and composition,respectively.The effects of N2 flux on the microstructure and morphologies were investigated.The results show that the microstructure of the CIGS films is mainly of chalcopyrite phase with a(112) preferred orientation at various N2 flux.The surface of CIGS thin film is the densest with uniform grain size at the N2 of 0.40m3/h.And the atomic ratios of Cu,In and Ga are in an ideal range for a CIGS film with weak p-type,which was obtained at the N2 flux of 0.40m3/h.更多还原