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氨化Si基Ga₂O₃/V薄膜制备GaN纳米线

Fabrication of GaN nanowires by ammoniating Ga₂O₃ film on V layer deposited on Si（111） substrates

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【Author】 YANG Zhao-zhu,XUE Cheng-shan,ZHUANG Hui-zhao,WANG Gong-tang, QING Li-xia,LI Hong,CHEN Jin-hua,HUANG Ying-long,ZHANG Dong-dong(Semiconductor Research Institute,Shandong Normal University,Ji’nan 250014,China)

【机构】山东师范大学半导体所；山东师范大学半导体所山东济南250014；山东济南250014；

【摘要】为了制备高质量的GaN纳米结构,采用磁控溅射技术先在硅衬底上制备Ga2O3/V薄膜,然后在流动的氨气中进行氨化反应,成功制备出GaN纳米线。采用X射线衍射(XRD)、傅里叶红外吸收光谱(FTIR)、扫描电子显微镜(SEM)和透射电子显微镜(TEM)对样品进行分析。研究结果表明,采用此方法得到了六方纤锌矿结构的GaN纳米线,且900℃时制备的纳米线质量最好,直径在60nm左右,长度达到十几微米。更多还原

【Abstract】 To gain the high-guality GaN nanostructure,GaN nanowires were successfully prepared on the Si(111) substrates through ammoniating Ga2O3/V thin films deposited by magnetron sputtering.These GaN nanowires were characterized by X-ray diffraction(XRD),fourier transformed infrared(FTIR) spectroscopy,scanning electron microscopy(SEM) and transmission electron microscopy(TEM).The results indicated that these nanowires were hexagonal GaN single crystals.The high-quality nanowires were prepared at 900℃ with the average diameter around 60nm and the length ranging up to 10 μm.更多还原