【摘要】 采用射频磁控溅射技术先在硅衬底上制备Ga2O3/Nb薄膜,然后在900℃时于流动的氨气中进行氨化制备GaN纳米线。用X射线衍射(XRD)、傅立叶红外吸收光谱(FTIR)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)详细分析了GaN纳米线的结构和形貌。结果表明:采用此方法得到的GaN纳米线为六方纤锌矿结构,其纳米线的直径大约在50~100nm之间,纳米线的长约几个微米。室温下以325nm波长的光激发样品表面,只显示出一个位于364.4nm的很强的紫外发光峰。最后,简单讨论了GaN纳米线的生长机制。更多还原

【Abstract】 Nb and Ga2O3 films were sputtered in turn on Si(111) substrates using radio frequency sputtering system.Then Ga2O3/ Nb films were ammoniated in tube furnace in the flowing NH3 ambience at 900℃.X-ray diffraction(XRD),scanning electron microscopy(SEM),transmission electron microscope(TEM),Fourier transformed infrared spectrum(FTIR) are used to characterize the structural and morphological properties of the as-synthesized GaN nanowires.The results reveal that the nanowires are pure hexagonal GaN wurtzite structure with a length of about several microns and a diameter of about between 50 and 100nm.Finally,the formation mechanism of gallium nitride nanowires is discussed briefly.更多还原