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通过引入电子阻挡层的高效率的有机磷光白光器件

Highly efficient white phosphorescent organic light-emitting devices using an electron/exciton blocker

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【作者】 姜文龙丁桂英汪津王静王立忠常喜韩强王洪梅赵晓红

【Author】 JIANG Wen-long,DING Gui-ying,WANG Jin,WANG Jing,WANG Li-zhong,CHANG Xi,HAN Qiang,WANG Hong-mei,ZHAO Xiao-hong(College of information Technology,Jilin Normal University,Siping 136000,China)

【机构】 吉林师范大学信息技术学院吉林师范大学信息技术学院 吉林四平136000吉林四平136000

【摘要】 以CBP作为母体材料,绿色磷光染料Ir(ppy)3作为敏化剂,以荧光染料rubrene作为受主,制备了结构为ITO/2T-NATA(25 nm)/NPBX(25-d nm)/CBP:5%Ir(ppy)3:0.5%Rubrene(8 nm)/NPBX(d nm)/DPVBi(30nm)/TPBi(20 nm)/Alq(10 nm)/LiF(1 nm)/Al的白光器件。在器件中,敏化剂Ir(ppy)3、荧光染料rubrene的浓度分别为5.0 wt%和0.5 wt%,发光层的厚度选择8 nm,通过调整两层NPBX的厚度来改善器件的性能,得到了比较理想的白光发射。当d的厚度为10 nm时,器件在7 V的电压下最大电流效率达到11.2 cd/A,在17 V的电压下其最大亮度达到28 170 cd/m2,色坐标为(0.37,0.42),处于白光区。

【Abstract】 The highly efficient white phosphorescent organic light-emitting devices(WOLEDs) were fabricated using an electron/exciton blocker.The device structure was ITO/2T-NATA(25 nm)/ NPBX(25-d nm)/CBP:5%Ir(ppy)3:0.5%Rubrene(8 nm)/NPBX(dnm)/DPVBi(30 nm)/TPBi(20 nm)/Alq(10 nm)/LiF(1 nm)/Al,where NPBX is N,N ′-bis-(1-naphthyl)-N,N ′-diphenyl-1,1 ′-biphenyl-4,4 ′-diamine as a hole transporting layer and electron/exciton blocker,CBP is 4,4,N,N′-dicarbazolebiphenyl as host,DPVBi is 4,4 ′-bis(2,2-diphenyl vinyl)-1,1 ′-biphenyl as blue fluorescent dye,rubrene is 5,6,11,12,-tetraphenylnaphthacene as fluorescent dye,Ir(ppy)3 is factris(2-phenylpyridine) iridium as phosphorescent sensitizer,and Alq is tris(8-hydroxyquinoline) aluminum as an electron-transporting layer.The WOLEDs obtained white light emission by adjusting thickness of NPBX,when the concentration of Ir(ppy)3 is 5.0 wt% and rubrene is 0.5 wt%,respectively,the thickness of the doped emissive layer is 8 nm.In the WOLEDs,a maximum luminous efficiency is11.2 cd/A with d is 10 nm at applied voltage of 7 V,a maximum luminance of 28 170 cd/m2 at applied voltage of 17 V,and CIE coordinates is(0.37.0.42),which is in white region.

【基金】 吉林省科技发展计划资助项目(20050523);吉林省教育厅科研计划资助项目([2003]第25号,[2004]第54号);四平科技局计划资助项目(第2005007号,第2006008号)
  • 【文献出处】 光电子.激光 ,Journal of Optoelectronics.Laser , 编辑部邮箱 ,2008年05期
  • 【分类号】TN383
  • 【被引频次】10
  • 【下载频次】145
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