【摘要】 采用0.5μm GaAs PHEMT工艺,研制了一种PIN光探测器和分布放大器单片集成850nm光接收机前端。探测器光敏面直径为30μm,电容为0.25pF,10V反向偏压下的暗电流小于20nA。分布放大器-3dB带宽接近20GHz,跨阻增益约46dBΩ;在50MHz~16GHz范围内,输入、输出电压驻波比均小于2;噪声系数在3.03~6.50dB之间。单片集成光接收机前端在1.0和2.5Gb/s非归零(NRZ)伪随机二进制序列(PRBS)调制的光信号下得到较为清晰的输出眼图。更多还原

【Abstract】 The front end of an 850 nm monolithic integrated optical receiver has been developed with 0.5 μm GaAs PHEMT process,which comprises a PIN photodetector and a distributed amplifier.The photodetector has a diameter and capacitance of 30 μm and 0.25 pF,respectively,as well as a dark current of less than 20 nA under the reverse bias of 10 V.The distributed amplifier has a -3dB bandwidth close to 20 GHz,with a transimpedance gain of 46 dB Ω; In the range of 50 MHz ～16 GHz,both the input and output voltage standing wave ratios are less than 2; The noise figure varies from 3.03 to 6.5 dB within the bandwidth.The monolithic integrated optical receiver front end output eye diagrams for 1 Gb/s and 2.5 Gb/s NRZ pseudorandom binary sequence (PRBS) are clear and satisfying.更多还原