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InP/InGaAs HBT的频率特性分析
Frequency Performance Analysis of InP/InGaAs HBT
【摘要】 频率特性是异质结双极型晶体管(HBT)设计中应首先考虑的因素,而fT,fmax则是HBT最主要的频率性能指标。首先基于InP/InGaAs HBT器件的物理结构构建了小信号等效电路模型,对该模型进行了理论分析,随后基于提取的有效参数结果,对该等效电路模型的频率特性进行了详细的计算和仿真,分析了影响fT,fmax的一些主要因素,得出的结论对于InP/InGaAs HBT的设计制作和性能优化具有一定的指导作用。
【Abstract】 Frequency performance is the first key factor in the design of heterojunction bipolar transistor(HBT),fTand fmax are the main frequency parameters.In this paper,InP/InGaAs HBT small-signal equivalent circuit model was introduced based on its structure at the beginning.Next,the circuit model had been analyzed theoretically.Then based on the exact parameter extraction result,the circuit model had been performed calculated and simulated.Some main factors which affect fT,fmax was analyzed,the conclusion shows that it might be very useful to instruct the design and optimization of InP/InGaAs HBT.
【Key words】 HBT; small-signal circuit model; cut-off frequency; power gain;
- 【文献出处】 光电子技术 ,Optoelectronic Technology , 编辑部邮箱 ,2008年03期
- 【分类号】TN322.8
- 【被引频次】4
- 【下载频次】147