【摘要】 提出两种实现相变存储器多值存储的方法.这两种方法基于新的机理,即通过存储单元结构或相变材料的改进来得到在传统"高阻态"和"低阻态"两态之间稳定的中间电阻状态.与传统实现相变多态存储的方法相比,利用这两种方法实现的多值相变存储,可以有效地提高多态存储的可靠性和抗噪声性能,有利于在提高存储密度的同时简化外围电路的设计,在实际应用中有良好的前景.更多还原

【Abstract】 Two approaches are proposed for multilevel storage based on phase change technology.The steady intermediate levels between the conventional amorphous state and crystalline state of Chalcogeinide are realized by changing the structure or material of the cell based on.In comparison with the conventional implementation of multi-level storage,the approaches proposed increase the reliability,signal-to-noise,storage density,and significantly simplify peripheral circuits.They will be promising for potential application.更多还原