【摘要】 影响GaN基LED的外量子效率低下的主要因素是光子在半导体和空气界面处的全反射。根据实际芯片建立LED模型,利用蒙特卡罗方法进行光线追迹模拟,分析了光子的主要损耗对出光效率的影响。计算不同的表面粗化微元,微元尺寸及微元底角对LED光提取效率的影响;比较不同微元形成的光场分布。模拟显示:所设计最佳的表面粗化结构在理想状况下可以提高光提取效率3倍以上。更多还原

【Abstract】 The external quantum efficiency of most conventional LEDs is limited by the total internal reflection of the generated light,which occurs at the semiconductor-air interface.A LED model is established according to the actual chip and main mechanisms of wastage of the photons are analyzed.The simulation takes Monte Carlo ray tracing as a basal method.Models with different kinds of tiles,size of tiles and bottom angle of tiles are simulated to get the optimal structure and distribution of the optical fields.The photon extraction efficiency of the optimally roughened surface LED shows a threefold increase compare to that of traditional one.更多还原