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超低噪声K波段放大器仿真设计
Design of on Ultra-low Noise K-band Amplifier
【摘要】 介绍了一种超低噪声K波段放大器的设计方法,以高电子迁移率晶体管为基础,采用3级放大拓扑结构,提出了一种改进型的负反馈网络,较好地改善了电路的增益平坦度。利用Agilent公司的微波电路CAD(计算机辅助设计)软件ADS2006对电路原理图及版图进行了仿真设计,最终实现了在工作频段19.5 GHz~21.5 GHz内,噪声系数小于1.5 dB、增益大于30 dB的优异电性能。
【Abstract】 This paper discusses the complete design flow of a K-band ultra-low noise amplifier with microwave simulation software ADS2006,including the circuit design,layout design and simulation process etc.This K-band low noise amplifier(LNA) consists of three-stage topological structure based on the HEMT application.A novel feedback configuration is proposed to improve the performance of the gain curve flatness.In 19.5 GHz~21.5 GHz band,this K-band LNA has good electrical performance,while the maximum noise figure of the K-band LNA was less than 1.5dB and the minimum gain higher than 30dB.
- 【文献出处】 电子工程师 ,Electronic Engineer , 编辑部邮箱 ,2008年10期
- 【分类号】TN722.3
- 【被引频次】4
- 【下载频次】184