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Cu Films Deposited by Unbalanced Magnetron Sputtering Enhanced by ICP and External Magnetic Field Confinement

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【作者】 齐雪莲任春生马腾才王友年

【Author】 QI Xuelian REN Chunsheng MA Tengcai WANG Younian State Key Laboratory of Materials Modification by Laser,Ion and Electron Beams,Dalian University of Technology,Dalian 1.16024,China

【机构】 State Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116024, China

【摘要】 <正> Metallic copper(Cu) films were deposited on a Si (100) substrate by unbalancedmagnetron sputtering enhanced by radio-frequency plasma and external magnetic field confine-ment.The morphology and structure of the films were examined by scanning electron microscopy(SEM),atomic force microscope (AFM) and X-ray diffraction (XRD).The surface average rough-ness of the deposited Cu films was characterized by AFM data and resistivity was measured bya four-point probe.The results show that the Cu films deposited with radio-frequency dischargeenhanced ionization and external magnetic field confinement have a smooth surface,low surfaceroughness and low resistivity.The reasons may be that the radio-frequency discharge and externalmagnetic field enhance the plasma density,which further improves the ion bombardment effectunder the same bias voltage conditions.Ion bombardment can obviously influence the growthfeatures and characteristics of the deposited Cu films.

【Abstract】 Metallic copper(Cu) films were deposited on a Si (100) substrate by unbalanced magnetron sputtering enhanced by radio-frequency plasma and external magnetic field confine- ment.The morphology and structure of the films were examined by scanning electron microscopy (SEM),atomic force microscope (AFM) and X-ray diffraction (XRD).The surface average rough- ness of the deposited Cu films was characterized by AFM data and resistivity was measured by a four-point probe.The results show that the Cu films deposited with radio-frequency discharge enhanced ionization and external magnetic field confinement have a smooth surface,low surface roughness and low resistivity.The reasons may be that the radio-frequency discharge and external magnetic field enhance the plasma density,which further improves the ion bombardment effect under the same bias voltage conditions.Ion bombardment can obviously influence the growth features and characteristics of the deposited Cu films.

【基金】 National Natural Science Foundation of China(Nos.50277003,10505005)
  • 【文献出处】 Plasma Science and Technology ,等离子体科学和技术(英文版) , 编辑部邮箱 ,2008年03期
  • 【分类号】O484
  • 【被引频次】3
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