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Growth of Fluorocarbon Films by Low-Pressure Dielectric Barrier Discharge

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【作者】 李伟谭晓东刘东平刘艳红冯忠庆陈宝佯

【Author】 LI Wei~(1,2) TAN Xiaodong~2 LIU Dongping~1 LIU Yanhong~3 FENG Zhiqing~1 CHEN Baoxiang~11 School of Science,Dalian Nationality University,Dalian 116600,China2 School of Mechanical Engineering,Dalian Jiaotong University,Dalian 116021,China3 State Key Laboratory for Material Modification by Laser,Ion,and Electron Beams,Dalian University of Technology,Dalian 116024,China

【机构】 School of Science, Dalian Nationality University, Dalian 116600, China School of Mechanical Engineering, Dalian Jiaotong University, Dalian 116021, ChinaSchool of Mechanical Engineering, Dalian Jiaotong University, Dalian 116021, ChinaSchool of Science, Dalian Nationality University, Dalian 116600, ChinaState Key Laboratory for Material Modification by Laser, Ion, and Electron Beams, Dalian University of Technology, Dalian 116024, China

【摘要】 <正> Plasma polymerized fluorocarbon (FC) films have been deposited on silicon sub-strates from dielectric barrier discharge (DBD) plasma of C4F8 at room temperature under apressure of 25~125 Pa.The effects of the discharge pressure and frequency of power supply onthe films have been systematically investigated.FC films with a less cross linked structure may beformed at a relatively high pressure.Increase in the frequency of power supply leads to a signifi-cant increase in the deposition rate.Static contact angle measurements show that deposited FCfilms have a stable,hydrophobic surface property.All deposited films show smooth surfaces withan atomic surface roughness.The relationship between plasma parameters and the properties ofthe deposited FC films are discussed.

【Abstract】 Plasma polymerized fluorocarbon (FC) films have been deposited on silicon sub- strates from dielectric barrier discharge (DBD) plasma of C4F8 at room temperature under a pressure of 25~125 Pa.The effects of the discharge pressure and frequency of power supply on the films have been systematically investigated.FC films with a less cross linked structure may be formed at a relatively high pressure.Increase in the frequency of power supply leads to a signifi- cant increase in the deposition rate.Static contact angle measurements show that deposited FC films have a stable,hydrophobic surface property.All deposited films show smooth surfaces with an atomic surface roughness.The relationship between plasma parameters and the properties of the deposited FC films are discussed.

【基金】 National Natural Science Foundation of China(No.10405005)
  • 【文献出处】 Plasma Science and Technology ,等离子体科学和技术(英文版) , 编辑部邮箱 ,2008年01期
  • 【分类号】TM83
  • 【被引频次】3
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