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溶胶-凝胶法制备低折射率和低介电常数介孔二氧化硅薄膜(英文)
Preparation of Low-k and Low-n Mesoporous Silica Films via Sol-Gel Process
【摘要】 采用溶胶-凝胶技术,蒸发诱导自组装法(EISA)工艺制备了二氧化硅透明有序介孔薄膜。以十六烷基三甲基溴化铵(CTAB)作为模板剂,正硅酸乙酯(TEOS)为硅源前驱体,基片采用双面抛光的硅片,利用提拉法制备薄膜。经过表面修饰剂六甲基二硅胺烷(HMDS)修饰后,薄膜具有疏水性能,而且薄膜的二氧化硅骨架结构更稳定。由椭偏仪测得热处理后的薄膜的折射率低至1.18,而薄膜的介电常数为2.14。
【Abstract】 Mesoporous silica films were successfully prepared through sol-gel process with evaporation-induced self-assembly. Tetraethoxysilane (TEOS) was used as silica precursor and Cetyltrimethylammonium bromide (CTAB) as the templating agent. The films were deposited on the silicon wafer or glass substrate using a dip-coating method. The refractive index(k) of the mesoporous films was 1.18, while the dielectric constant(n) was 2.14.
【关键词】 介孔薄膜；
溶胶-凝胶；
低折射率；
低介电常数；
【Key words】 mesoporous films； sol-gel； low dielectric constant； low refractive index；
【Key words】 mesoporous films； sol-gel； low dielectric constant； low refractive index；
【基金】 National Natural Science Foundation of China(Grant No.20133040,69978017,50572073);Chinese National Foundation of High Technology(2002AA842052);Shanghai Key Subject Program,Shanghai Phosphor Program(05QMH1413);Trans-Century Training Program Foundation for the Talents by the State Education Commission
- 【文献出处】 稀有金属材料与工程 ,Rare Metal Materials and Engineering , 编辑部邮箱 ,2008年S2期
- 【分类号】TB43
- 【被引频次】7
- 【下载频次】356