节点文献

利用HRXRD和UV-Vis反射光谱确定AlGaN/GaN/Al₂O₃的结构与成分

Structure and Composition of AlGaN/GaN Determined by HRXRD and UV-Vis Reflection

推荐 CAJ下载
PDF下载
不支持迅雷等下载工具，请取消加速工具后下载。

【Author】 JI Zhen-guo~1,FENG Dan-dan~1,XI Jun-hua~2,MAO Qi-nan~2,YUAN Yuan~2,HAO Fang~1,CHEN Ming-mei~1(1.Institute of electronic information,Hangzhou Dianzi University,Hangzhou 310018,China;2.State key laboratory for silicon materials,Zhejiang University,Hangzhou 310027,China)

【机构】杭州电子科技大学电子信息学院；浙江大学硅材料国家重点实验室；杭州电子科技大学电子信息学院浙江杭州310018；浙江杭州310018；浙江杭州310027；

【摘要】结合紫外-可见光谱和高分辨XRD两种测试方法,无损、可靠地确定了AlGaN/GaN HEMT结构内各层的厚度、成分、应力等参数,解决了高分辨XRD无法同时确定成分与应力的难题。这两种方法的好处是样品不需经过特殊的处理,也不需进行切割、减薄等工艺,具有快速、无损、准确的特点,可以作为AlGaN/GaNHEMT器件的筛选工具,提高器件的成品率、降低生产成本。更多还原

【Abstract】 AlGaN/GaN/Al₂O₃ HEMT structures were non-destructively characterized by the combination of UV-Vis spectra and High resolution X-ray diffraction. From this combination,thickness,composition,and strain in the individual layers in the HEMT structure can be uniquely determined.The merits of this combination including non-destructive,high reliability,and high efficiency,compared to other techniques such as TEM and SEM by which samples should be mechanically processed.It can be used as an online QC technique for the AlGaN/GaN HEMT device production to reduce the production cost and improve the quality of the HEMT device.更多还原