【摘要】 n型单晶硅经光电化学阳极刻蚀成多孔硅,研究了多孔硅经硝酸银(AgNO3)水溶液浸泡前后样品的光致发光(PL)性质,实验发现,浸泡很短时间内多孔硅发光强度增强,浸泡时间较长的样品发光强度会衰减直至猝灭,且浸泡液浓度越大荧光衰减越明显。通过扫描电子显微镜(SEM),傅立叶红外光谱(FTIR)和X射线光电子能谱(XPS)的检测显示,AgNO3水溶液浸泡的多孔硅样品表面有金属银析出。光致发光增强是多孔硅表面形成Si—O结构所致,荧光猝灭是因为银在多孔硅表面形成大量非辐射复合中心。更多还原

【Abstract】 Porous silicon(PS) was formed by etching n type silicon photo-electrochemically and its visible photoluminescence(PL) was affected by immersing in silver nitrate solution.Self-assembled silver nano-islands on the surface of immersed PS has been obsevered by scanning electron microscopy(SEM).Measurement results of Fourier transform infrared(FTIR) spectroscopy and the X-ray photoelectron spectroscopy(XPS) showed that PL enhancement of the PS might be attributed to Si-O structure,which was formed by the interaction between the rare silver islands and silicon and played effective luminescence centers.And the PL intensity decayed more dramatically with the increasing concentration of the silver islands which are non-radiative carrier-recombination centers.更多还原