【摘要】 采用双槽电化学腐蚀法制备多孔硅材料,形成了Pt/多孔硅/P+型单晶硅/多孔硅/Pt的样品微结构。主要研究了腐蚀条件及氧化后处理对这一微结构横向I-V特性的影响。结果表明该微结构横向I-V特性主要由多孔硅层的电学特性所决定,呈现出非整流的欧姆接触特性。更多还原

【Abstract】 Porous silicon（PS） was prepared in a double-tank cell by using the electrochemical corrosion method and the samples with a Pt/PS/P⁺-Si/PS/Pt microstructure were obtained.The effects of the etching conditions and post-oxidation process of PS on the transverse I-V characteristics of this kind of microstructure were thoroughly investigated.It was shown that the transverse I-V characteristics of this kind of microstructure were mainly decided by the electrical properties of PS underlayer,which had nonrectifying properties of ohmic contacts.更多还原