【摘要】 利用PLD法在Si衬底上成功地制备了具有较好C轴择优取向生长的ZnO薄膜,从样品的XRD谱可以看出在环境氧压为20Pa,衬底温度为700℃时生长的样品的XRD谱(002)峰半高宽较窄,膜的结晶程度最好。不同的衬底温度下膜的生长机制也不一样,主要有:V-L-S机制和V-S机制。样品室温下的PL谱显示所有样品均出现UV发射和可见光区蓝绿光发射,而蓝绿光发射强度随氧压的增大而增强,表明样品的蓝绿光发射来源于样品中的受主缺陷。更多还原

【Abstract】 C-axis oriented ZnO films are prepared on Si substrates by pulsed-laser deposition（PLD）.From the XRD patterns,it can be found that the films growing in the condition of Po₂ = 20Pa,T_sub = 700℃has the relatively narrow FHWM,which means good crystallinity.The films growing at different substrate temperatures follow different growth mechanisms:the V-L-S mechanism and the V-S mechanism.The room temperature PL spectra of the samples show both the UV emission feature and a much broader emission band in the blue-green region.The blue-green emission becomes more intense as the substrate temperature gets higher.This means that the blue-green emission can be attributed to the acceptor defect.更多还原