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Al掺杂量对ZnO∶Al薄膜微观结构和光电性能的影响
Effect of Al Doping Concentration on the Structure,Electrical and Optical Properties of ZnO∶Al Films
【摘要】 采用溶胶-凝胶法在玻璃基片上制备出不同Al掺杂量的ZnO:Al(ZAO)薄膜。系统研究了Al掺杂量对薄膜微结构和光电性能的影响。结果表明:溶胶-凝胶法制备的薄膜具有完好C轴择优取向,在可见光区的透射率均大于85%;随着Al掺杂量的增加,薄膜的平均颗粒尺寸减小,表面电阻率先降低后升高,薄膜的光学带隙宽变宽。在5%H2+95%N2气氛退火可显著降低薄膜电阻率,掺Al量为2%的薄膜具有最低电阻率5.5×10-3Ω·cm。
【Abstract】 Al-doped ZnO(ZAO) thin films with different doping concentrations are deposited on glass substrates using the sol-gel method.The effect of Al doping concentration on the microstructure,electrical and optical properties of the films is investigated.The results show that all the films prepared by the sol-gel method have high preferential C-axis orientation,and the transmittances with different Al doping concentrations are over 85%within the visible wavelength region.With increasing the Al doping concentration,the average size of the film decreases,the electrical resistivity increases first,then decreases,and the optical band-gap energy broadens.The electrical resistivity decreases obviously by 5%H2 +95%N2 atmosphere annealing,and a minimum resistivity of 5.5×10-3Ω·cm is obtained for the film doped with 2%Al.
【Key words】 sol-gel; Al doping; ZnO:Al; electrical resistivity; band-gap;
- 【文献出处】 材料导报 ,Materials Review , 编辑部邮箱 ,2008年S1期
- 【分类号】O484.4
- 【被引频次】6
- 【下载频次】200