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Al掺杂量对ZnO∶Al薄膜微观结构和光电性能的影响

Effect of Al Doping Concentration on the Structure,Electrical and Optical Properties of ZnO∶Al Films

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【作者】 徐迪段学臣朱协彬傅欣

【Author】 XU Di,DUAN Xuechen,ZHU Xiebin,FU Xin (School of Material Science and Engineering,Central South University,Changsha 410083)

【机构】 中南大学材料科学与工程学院

【摘要】 采用溶胶-凝胶法在玻璃基片上制备出不同Al掺杂量的ZnO:Al(ZAO)薄膜。系统研究了Al掺杂量对薄膜微结构和光电性能的影响。结果表明:溶胶-凝胶法制备的薄膜具有完好C轴择优取向,在可见光区的透射率均大于85%;随着Al掺杂量的增加,薄膜的平均颗粒尺寸减小,表面电阻率先降低后升高,薄膜的光学带隙宽变宽。在5%H2+95%N2气氛退火可显著降低薄膜电阻率,掺Al量为2%的薄膜具有最低电阻率5.5×10-3Ω·cm。

【Abstract】 Al-doped ZnO(ZAO) thin films with different doping concentrations are deposited on glass substrates using the sol-gel method.The effect of Al doping concentration on the microstructure,electrical and optical properties of the films is investigated.The results show that all the films prepared by the sol-gel method have high preferential C-axis orientation,and the transmittances with different Al doping concentrations are over 85%within the visible wavelength region.With increasing the Al doping concentration,the average size of the film decreases,the electrical resistivity increases first,then decreases,and the optical band-gap energy broadens.The electrical resistivity decreases obviously by 5%H2 +95%N2 atmosphere annealing,and a minimum resistivity of 5.5×10-3Ω·cm is obtained for the film doped with 2%Al.

【关键词】 溶胶凝胶Al掺杂ZnO:Al电阻率带隙
【Key words】 sol-gelAl dopingZnO:Alelectrical resistivityband-gap
【基金】 湖南省自然科学基金(01JJY20575);中南大学米塔尔创新项目(05M006)
  • 【分类号】O484.4
  • 【被引频次】6
  • 【下载频次】200
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