【摘要】 用低压化学气相淀积(LPCVD)法淀积了膜厚为60～250nm的多晶硅纳米薄膜,研究了膜厚和掺杂浓度对多晶硅纳米薄膜电学特性的影响。结合扫描电镜(SEM)图片,在电阻率与电阻率温度系数测试结果的基础上,分析了膜厚和掺杂浓度对薄膜电学特性的影响。结果表明:重掺杂多晶硅纳米薄膜具有良好的温度特性,电阻率温度系数可达到1×10-4～3×10-4/℃的水平。更多还原

【Abstract】 The polysilicon nano-films with thicknesses from 60~250nm are deposited by LPCVD to investigate the influence of thickness and doping concentration on the electrical properties of polysilicon nano-films.Combined with the SEM pictures of the films,the influence is analyzed theoretically based on the tested results of resistivity and temperature coefficient of resistivity.The results indicate that the heavy doped polysilicon nanofilms have better temperature characteristics,and their temperature coefficient of resistivity has a low value at 1×10-4~3×10-4/℃.更多还原