【摘要】 设计并制备了一种低电压的静电驱动接触式单刀四掷(SP4T)RFMEMS开关。单元开关采用以低应力氮氧化硅(SiON)作为桥膜的双端固定桥式结构,并利用附着的金层形成接触结构。整个SP4T开关包括与50Ω特征阻抗相匹配的共面波导,1个输入端,4个输出端,4个静电驱动的侧拉桥,以及4个驱动引出区(pad)。测试数据表明,开关驱动电压18.8V;插入损耗S21<0.26dB@DC-3GHz,S31<0.46dB@DC-3GHz;隔离度S21>69.5dB@DC-3GHz,S31>69.2dB@DC-3GHz。结果显示,此开关的隔离度在所有输出端有很好的一致性,插损在DC-3GHz的频段内均较小,非常适合低频使用。更多还原

【Abstract】 An electrostatic actuated SP4T(single-pole multi-throw)contact RF MEMS switch with low voltage is designed and fabricated.SiON(silicon oxynitride)with low initial stress is used as the functional material of the fixed-fixed bridge of the unit switch,and gold as the contact metal.The whole SP4T switch consists of coplanar waveguide which meets 50 Ω characteristic impedance match,an input port,four output ports,four static actuated bridges,and four control pads.Measurements show the actuation voltage is 18.8 V,insertion loss S21<0.26dB@DC-3 GHz,S31<0.46 dB@DC-3 GHz,isolation S21>69.5 dB@DC-3 GHz,S31>69.2 dB@DC-3 GHz.The results indicate that four output ports present very similar isolation,and their insertion loss are enough small at low frequency band.更多还原