【摘要】 以铜离子选择电极为靶材,采用脉冲激光沉积技术在p型单晶硅基底上制备了一种铜离子选择电流型薄膜传感器。该传感器的线性区间为10-4~10-6mol/L,标准曲线的斜率为71nA/decade,检出限为3.0×10-7mol/L,适宜pH范围4~6,响应时间不超过2min,在12周内该薄膜传感器显示了良好的稳定性和重复性。该薄膜传感器采用交流红外调制光源激发,以外电路中电流幅值变化量为铜离子浓度测量依据,基于电流量来表征薄膜传感器线性区斜率,该薄膜传感器的检出限比对应的铜离子选择电压型电极低,灵敏度提高了2.45倍。更多还原

【Abstract】 Copper ion selective galvanic thin film sensor has been fabricated by means of pulsed laser deposition (PLD). The target material was copper ion selective electrode and the substratum is single crystal silicon of p type. The range of linearity of the thin film sensor is from 10-1 mol/L to 10-6 mol/L, the slope of calibration curve is 71 nA/decade, the limit of detection is 3.0×10-7 mol/L, the scope of pH application is 4 to 6 and the response time is less than 2 min. The thin film sensor shows good repetition and stability in the 12 weeks. The thin film sensor is excited by alternating current infrared light resource and the copper ion concentration is measured according to the electronic current amplitude in outside circuit. The detection limit of the thin film sensor is lower than the corresponding copper ion selective electrode’s and the sensitivity of thin film sensor improve 2.45 because the linearity slope is indicated by electronic current variable.更多还原