【摘要】 用PECVD技术制备了不同掺磷比的非晶硅薄膜,然后退火改性.红外透射光谱揭示了薄膜内部的键合模式随生长工艺条件变化的规律;测量和分析了非晶硅红外热吸收及电阻温度系数与薄膜结构之间的关系.综合考虑非晶硅电阻率和电阻温度系数两个因素,采用掺杂比0.025,退火温度600℃的薄膜样品进一步研究.更多还原

【Abstract】 A hydrogenated amorphous silicon of different phosphor doping concentr ations is fabricated by PECVD.FTIR spectra and TCR of a-Si:H are obtained afte r annealing at different temperatures and times.The structure and bonding of the film are decided by different annealing conditions,leading to the change in th e thermal and electric characteristics.Lu’s model is used to explain the phenom ena,and an optimum preparation is attained with a doping ratio of 0.025 and an annealing temperature of 600℃.更多还原