【摘要】 采用高压射频等离子体增强化学气相沉积(RF-PECVD)方法制备本征硅薄膜和n-i-p结构太阳电池,研究了氢稀释率对本征硅薄膜的电学特性和结构特性的影响.采用光发射谱(OES)和喇曼(Raman)散射光谱研究了处于过渡区的本征硅薄膜的纵向结构演变过程.结果表明:光发射谱和喇曼散射光谱可以作为研究硅薄膜的纵向结构演变有效手段.随着氢稀释率的增加,硅薄膜从非晶相向微晶相过渡时,其纵向结构的改变会严重影响硅薄膜太阳电池的光伏性能.更多还原

【Abstract】 Hydrogenated microcrystalline silicon(μc-Si:H)intrinsic films and solar cells are prepared by plasma enhanced chemical vapor deposition(PECVD)with various hydrogen dilution ratios.The influence of hydrogen dilution ratios on electrical characteristics is investigated to study the phase transition from amorphous to microcrystalline silicon.During the deposition process,the optical emission spectroscopy(OES)from plasma is recorded and compared with the Raman spectra of the films,by which the microstructure evolution of different H2 dil ution ratios and its influence on the performance of μc-Si:H n-i-p solar cells is investigated.更多还原