【摘要】 以硅片、石墨和SiO2粉末为原料,通过多重气固反应成功地制备出一维SiC纳米线.X射线衍射仪分析表明生成产物为立方结构的β-SiC.利用扫描电子显微镜、透射电子显微镜和高分辨透射电子显微镜(HRTEM)观察,该一维SiC纳米线的直径为30~50nm,长度可达几十甚至上百微米,为沿[111]方向生长的单晶β-SiC纳米线.根据多次对比实验的结果,由多重气固(VS)反应提出了该方法制备SiC纳米线的生长机理.更多还原

【Abstract】 SiC nanowires are successfully synthesized via multiple VS reactions using silicon chips,graphite,and SiO2 powder as raw materials.XRD results identify the product as a cubic β-SiC structure.SEM and TEM images show that the diameter of the SiC nanowires is in the range of 30-50nm and length is up to tens of microns,even over one hundred microns.HRTEM analysis indicates single crystalline β-SiC nanowires with a main growth direction of [111].According to a series of experiments,a mechanism of multiple VS reactions is proposed to explain the formation of SiC nanowires.更多还原