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SnO₂纳米线的低温生长及光致发光研究（英文）

Low-Temperature Growth and Photoluminescence of SnO₂ Nanowires

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【Author】 Wang Bing1,,Xu Ping1,and Yang Guowei2(1 Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology,School of Electronic Science and Technology,Shenzhen University,Shenzhen 518060,China)(2 State Key Laboratory of Optoelectronic Materials and Technologies,Institute of Optoelectronic and Functional Composite Materials,School of Physics Science & Engineering,Zhongshan University,Guangzhou 510275,China)

【机构】深圳大学电子科学与技术学院深圳微纳光子信息技术重点实验室；中山大学光电材料与技术国家重点实验室；

【摘要】在550℃下,通过Au-Ag合金助催热蒸发氧化亚锡,制备了25nm的SnO2纳米线.测试了SnO2纳米线的室温光致发光谱,其四个发光峰中,418nm的峰是新发现的峰,它是孪晶纳米线的面缺陷造成的.SnO2纳米线的低温生长机制遵从VLS生长机制,且与SnO粉末的应用有一定的关系.SnO2纳米线的较小尺度与气相因子的低温度低浓度化学反应有关.更多还原

【Abstract】 SnO2 nanowires with a diameter of 25nm are synthesized at 550℃ by Au-Ag catalyst assisted thermal evaporation of SnO powders.The room-temperature photoluminescence spectra(PL)of the prepared nanowires are measured.Among the four PL peaks,the peak of 418nm is newly observed.This peak is caused by the plane defects of the twinned crystal nanowires.The formation of SnO2 nanowires at low temperature is pursued on the basis of the VLS mechanism and application of the reaction source of SnO.We suggest that the chemical reactions of the low temperature and low concentration of the vaporized species are responsible for the thinner size of the SnO2 nanowires.更多还原