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AlGaN/GaN型气敏传感器对于CO的响应研究

A Carbon Monoxide Gas Sensor Based on an AlGaN/GaN Structure

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【作者】 冯春王晓亮王新华肖红领王翠梅胡国新冉军学王军喜

【Author】 Feng Chun,Wang Xiaoliang,Wang Xinhua,Xiao Hongling,Wang Cuimei,Hu Guoxin,Ran Junxue,and Wang Junxi(Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083, China)

【机构】 中国科学院半导体研究所中国科学院半导体研究所 北京100083北京100083

【摘要】 研究了基于AlGaN/GaN型结构的气敏传感器对于CO的传感性.制备出AlGaN/GaN型气敏传感器器件,并测试得到了器件在50℃时对于不同浓度(1%,9000,8000,5000和1000ppm)的CO的响应情况;测试并分析了1%CO在50和100℃下响应度的差异,计算了通入1%CO前后器件的肖特基势垒高度的变化和灵敏度随电压的分布关系.结果表明,器件的灵敏度强烈依赖于器件的工作温度和通入的气体浓度,随着温度和浓度的增加,器件的灵敏度呈单调增加,器件在100℃空气气氛中表现出了良好恢复性能.

【Abstract】 This paper reports gas sensors based on an AlGaN/GaN structure for CO detection.The devices have been fabricated and showed remarkable sensitivity at measured temperatures.Response characteristics of the devices have been measured under different CO concentrations (1%,9000ppm,8000ppm,5000ppm,1000ppm) at 50℃.For the sake of comparison,the response of the device induced by 1% CO at 100℃ has also been measured.The sensitivity and variation of Schottky barrier height induced by 1% CO have been calculated at 50℃ and 100℃,respectively.Finally,the sensitivity strongly depends on the temperature and the CO concentration and increased as the temperature and concentration increased.

【关键词】 AlGaN/GaNCO传感器
【Key words】 AlGaN/GaNCOgas sensors
【基金】 中国科学院知识创新工程(批准号:YYYJ-0701-02);国家自然科学基金(批准号:60576046,60606002);国家重点基础研究发展规划(批准号:2002CB311903,2006CB604905,513270505)资助项目~~
  • 【文献出处】 半导体学报 ,Journal of Semiconductors , 编辑部邮箱 ,2008年07期
  • 【分类号】TP212
  • 【被引频次】5
  • 【下载频次】216
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