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大马士革铜互连线织构的研究(英文)

Texture Analysis of Damascene Copper Interconnects

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【作者】 王晓冬; 吉元; 钟涛兴; 李志国; 夏洋; 刘丹敏; 肖卫强;

【Author】 Wang Xiaodong1,Ji Yuan2,Zhong Taoxing2,Li Zhiguo3,Xia Yang4,Liu Danmin2,and Xiao Weiqiang2(1 Basic Department,Chinese People’s Armed Police Forces Academy,Langfang 065000,China)(2 Institute of Microstructure and Property of Advanced Materials,Beijing University of Technology,Beijing 100022,China)(3 School of Electronic Information & Control Engineering,Beijing University of Technology,Beijing 100022,China)(4 Microelectronics R & D Center,Chinese Academy of Sciences,Beijing 100029,China)

【机构】 中国人民武装警察部队学院基础部; 北京工业大学固体微结构与性能研究所; 北京工业大学电子信息与控制工程学院; 中国科学院微电子中心; 北京工业大学固体微结构与性能研究所 廊坊065000; 北京100022; 北京100029;

【摘要】 采用EBSD研究了不同线宽和退火前后Cu互连线的织构和晶界特征分布.Cu互连线均具有多重织构,其中(111)织构强度最高.沉积态样品在室温下发生了自退火现象,并出现了一些异常长大的晶粒.随高宽比降低和退火处理,Cu互连线晶粒尺寸变大,(111)织构得到加强,而具有较低应变程度的织构与(111)织构强度的比例下降.沉积态样品出现了(111)〈112〉和(111)〈231〉织构组分.退火后,出现了(111)〈110〉组分,而且(111)〈112〉和(111)〈231〉组分得到增强.Cu互连线以大角度晶界为主,其中具有55~60°错配角的晶界和Σ3晶界比例最高,35~40°的错配角和Σ9晶界次之.随高宽比增加和退火处理,Σ3晶界比例逐渐升高,Σ9晶界比例下降.

【Abstract】 Texture and grain boundary character distribution of Cu interconnects with different line width for as-deposited and annealed conditions were measured by EBSD.All specimens appear mixed texture and(111)texture is the dominate component.As-deposited interconnects undergo the phenomenon of self-annealing at RT,in which some abnormally large grains are found.Lower aspect ratio of lines and anneal treatment procured larger grains and stronger(111)texture.Meanwhile,the intensity proportion of other textures with lower strain energy to(111)texture is decreased.As-deposited specimens reveal(111)〈112〉 and(111)〈231〉 components.(111)〈110〉 component appeared and(111)〈112〉 and(111)〈231〉 components were developed during the annealing process.High angle boundaries are dominant in all specimens,boundaries with a misorientation of 55°-60° and Σ3 ones in higher proportion,followed by lower boundaries with a misorientation of 35°-40° and Σ9 boundaries.As the aspect ratio of lines and anneal treatment increase,there is a gradual increment in Σ3 boundaries and a decrease in Σ9 boundaries.

【基金】 国家自然科学基金资助项目(批准号:69936020)~~
  • 【文献出处】 半导体学报 ,Journal of Semiconductors , 编辑部邮箱 ,2008年06期
  • 【分类号】TN303
  • 【被引频次】5
  • 【下载频次】232
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