【摘要】 采用HWCVD技术在p型CZ晶体硅衬底上制备了纳米硅/晶体硅异质结太阳电池,测量了晶体硅表面在不同氢处理时间下的异质结的暗I-V特性和相应的电池性能参数.室温下的正向暗I-V特性采用双二极管模型来拟合,可将0～1V的电压范围区分为4个区域:旁路电阻(0～0.15V)、非理想二极管2(0.15～0.3V)、理想二极管1(0.3～0.5V)和串联电阻(>0.5V).拟合结果表明,适当的氢处理时间(～30s)可有效降低非理想二极管的理想因子n2,即降低界面复合电流,表明具有好的界面特性.对于282～335K的暗I-V温度特性的研究表明,在0.15～0.3V的低电压范围,暗电流主要由耗尽区的复合电流提供,0.3～0.5V电压范围,对输运起主要作用的是隧穿过程,该过程可用通过界面陷阱能级的隧穿模型来解释.更多还原

【Abstract】 N nc-Si/c-Si heterojunction solar cells were prepared with the hot-wire chemical vapor deposition technique.The dark I-V characteristics of the cells with different atomic hydrogen treatments on the c-Si surface were measured.At room temperature,the I-V curves were fitted by a two-diode model in which four different voltage regions were recognized:the shunt resistance(V<0.15),nonideal diode(0.15<V<0.3V),ideal diode(0.3<V<0.5V),and series resistance(V>0.5V)regions.The modeled results show that the ideality factor of the nonideal diode(n2)is decreased by a suitable atomic hydrogen treatment of 30s,indicating a lower recombination current and a better interface property.The dark I-V characteristics in the temperature range of 282~335K indicate that in the lower voltage range of 0.15~0.3V,the dark current mainly originates from the recombination current in the depletion region.In the 0.3~0.5V range,the tunneling process dominates in the transport mechanism,which can be described by an interfacial tunneling process through the interface states.更多还原