【摘要】 详细讨论了基于CMOS工艺宽带片上巴伦的实现.首先分析了应当采用的结构及参数化版图.然后给出了一个宽带集总元件等效电路模型,该模型考虑了各种必须考虑的物理效应.通过采用物理公式与优化拟合相结合的方法提取了模型参数,以保证模型在很宽频带范围内具有较高精度.最后,采用台湾半导体制造有限公司(TSMC)提供的0.13μm混合信号/射频CMOS工艺实际制作了两个具有不同几何参数的巴伦,并使用AgilentE8363B矢量网络分析仪测量了S参数.测量结果表明在高达毫米波频段范围内,模型仿真结果与测试结果符合得很好.更多还原

【Abstract】 The implementation of broadband monolithic baluns based on CMOS technology is investigated.The configuration and parameterized layout are analyzed.Then,a wide-band lumped element equivalent circuit model accounting for all necessary physical effects is proposed and model parameters are extracted,with high accuracy in a broadband frequency range,via combination of physical formula and fitting optimization.Two baluns were implemented with TSMC’s one-poly eight-metal(1P8M)0.13μm mixed-signal(MS)/RF CMOS process.The S-parameters of these two baluns were measured using a vector network analyzer.The measured results agree well with the modeled parameters up to millimeter-wave frequencies.更多还原