节点文献

退火后无应变Ga_1-xIn_xN_yAs_1-y/GaAs量子阱的带隙

Bandgap Energies in Strain-Free Ga_1-xIn_xN_yAs_1-y/GaAs QWs After Annealing

推荐 CAJ下载
PDF下载
不支持迅雷等下载工具，请取消加速工具后下载。

【作者】文于华；唐吉玉；赵传阵；吴靓臻；孔蕴婷；汤莉莉；刘超；吴利锋；李顺方；陈俊芳；

【Author】 Wen Yuhua,Tang Jiyu,Zhao Chuanzhen,Wu Liangzhen,Kong Yunting,Tang Lili, Liu Chao,Wu Lifeng,Li Shunfang,and Chen Junfang(College of Physics and Telecommunication,South China Normal University,Guangzhou 510006,China)

【机构】华南师范大学物理与电信工程学院；华南师范大学物理与电信工程学院广州510006；广州510006；

【摘要】针对快速热退火引起的N最近邻原子环境的变化,建立了热平衡态下Ga1-xInxNyAs1-y合金中各二元化合键的统计分布模型.并将理论计算得到的N周围平均In原子数r引入到BAC经验模型中,对退火后的Ga1-xInxNyAs1-y体材料带隙进行了计算.最后,利用讨论BAC模型中电子波函数边界条件的方法,计算了无应变Ga1-xInxNyAs1-y/GaAs量子阱的带隙.更多还原

【Abstract】 According to the annealing-induced changes of an N-centered nearest-neighbor (NN) environment in GaxIn1-xNyAs1-y quaternary alloys,we present a statistical distributing model of the binary bonds in a thermodynamics equilibrium state.Then,the parameter r,the calculated number of NN In atoms per N atom,is introduced into the BAC empirical model.Finally,bandgap energies in strain-free Ga1-xInxNyAs1-y/GaAs QWs are calculated by discussing the boundary conditions for the electron wavefunction in the BAC model.更多还原