【摘要】 报道了共振隧穿二极管(RTD)在压力下的弛豫振荡特性.采用Pspice8.0软件仿真并设计了振荡电路,测得其振荡频率达200kHz.在(100)半绝缘(SI)GaAs衬底上利用分子束外延(MBE)技术生长了AlAs/InxGa1-xAs/GaAs双势垒共振隧穿结构(DBRTS),并采用Au/Ge/Ni/Au金属化和空气桥结构成功加工出了RTD.由于RTD的压阻效应,采用显微喇曼光谱仪标定所加应力大小,对RTD在加压条件下的振荡特性进行了研究,结果表明其弛豫振荡频率大致有-17.9kHz/MPa的改变量.更多还原

【Abstract】 The relaxation oscillation characteristics of a resonant tunneling diode (RTD) with applied pressure are reported.The oscillation circuit is simulated and designed by Pspice 8.0,and the measured oscillation frequency is up to 200kHz.Using molecular beam epitaxy (MBE),AlAs/InxGa1-xAs/GaAs double barrier resonant tunneling structures (DBRTS) are grown on (100) semi-insulated (SI) GaAs substrate,and the RTD is processed by Au/Ge/Ni/Au metallization and an air-bridge structure.Because of the piezoresistive effect of RTD,with Raman spectrum to measure the applied pressure,the relaxation oscillation characteristics have been studied,which show that the relaxation oscillation frequency has approximately a -17.9kHz/MPa change.更多还原