【摘要】 利用金属有机化学气相淀积(MOCVD)技术,生长了AlGaInAs/AlGaAs分别限制压应变单量子阱材料,利用该材料制成3mm宽、填充因子20%的半导体激光器阵列(版型100μm/500μm,6个发光单元),通过腔面反射率设计确定了最佳反射率,采用CS载体标准封装。在输入电流8A、水冷19℃条件下测试,输出功率达到8.4W,阈值电流为1.8A,斜率效率为1.26W/A,功率转换效率为59.4%,波长为805.7nm,光谱半宽为1.8nm;输入电流12A时,输出功率达到13W,斜率效率为1.22W/A,功率转换效率为58.9%,波长为807.9nm,光谱半宽为2.0nm。更多还原

【Abstract】 AlGaInAs/AlGaAs separated confinement heterostructure compressively strained single quantum well materials were grown by metal organic chemical vapor deposition (MOCVD).The peak output power of the semiconductor laser array (3 mm width,20% fill factor,100 μm/500 μm,6 emitters)with the material is 8.4 W(drive current 8 A,19 ℃),threshold current is 1.8 A,the slop efficiency is 1.26 W/A,the 59.4% power conversion efficiency is reached,the peak wavelength is 805.7 nm,and the full width at half maximum is 1.8 nm.The peak output power is 13 W (drive current 12 A),the slop efficiency is 1.22 W/ A,the power conversion efficiency 58.9% is reached,the peak wavelength is 807.9 nm,and the full width at half maximum is 2.0 nm.更多还原