【摘要】 利用MBE技术在(311)A GaAs衬底上生长了Si掺杂GaAs/Al GaAs p沟道HFET结构材料。通过控制V/Ⅲ束流和其他生长参数,优化了材料的生长条件。通过Si掺杂获得p型GaAs和Al GaAs材料,研制生长了微波毫米波器件应用的HFET器件结构材料。Hall测试表明该结构材料具有很好的特性。更多还原

【Abstract】 The GaAs/AlGaAs p channel HFET structure materials were grown on(311)A GaAs substrate by molecular beam epitaxy.The growth conditions were optimized by controlling the V/Ⅲ flux ratio and other growth conditions.The p type GaAs and AlGaAs materials using only silicon doping were grown in microwave and millimeter wave device.The Hall measurements indicate that this p channel HFET material has excellent performance.更多还原