【摘要】 对硫酸盐体系中电镀得到的Cu镀层,使用XRD研究不同电沉积条件、不同衬底和不同厚度镀层的织构情况和择优取向。对比了直流电镀和脉冲电镀在有添加剂和无添加剂条件下的织构情况。实验结果表明,对于在各种条件下获得的1μm Cu镀层,均呈现(111)晶面择优,这样的镀层在集成电路Cu互连线中有较好的抗电迁移性能。更多还原

【Abstract】 The Cu fims with different electrodeposited conditions,substrates and thickness were electrodeposited in sulphate electrolyte.The texture coefficient and preferred orientation of Cu film were investigated by XRD(X-ray diffraction).The texture coefficient condition of DC plating and pulse plating with additive or not were compared.The results show that for the 1 μm Cu film obtained at different conditions presents(111) preferred orientation in most cases,which would be propitious to interconnect in ULSI for its good properties in electromigration resistance.更多还原