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长余辉发光材料中掺杂中心参数的理论估算
Theoretical Estimation on the Parameters of Dopant Center in Long After-GlowLuminescence Materials
【摘要】 采用复合体模型,探讨了长余辉晶体Y2O2S∶Eu中碱土金属离子M2+和Ti4+离子对Y3+离子的取代,离子间价电子数的差异,会造成掺杂中心的净电荷效应,当掺杂中心的净电荷为正时,掺杂中心起电子陷阱作用;当掺杂中心的净电荷为负时,掺杂中心起空穴陷阱作用。利用量子力学变分原理获得了碱土金属离子M2+和Ti4+掺杂中心的势阱深度和捕获半径的对应关系,利用所得结论估算出共掺杂的空穴陷阱[MgY]-和电子陷阱[TiY]+的有效捕获半径分别为0.117 nm和0.071 nm。
【Abstract】 Adopping a complex model,the replace of alkaline-earth metal ions M2+and Ti4+ to Y3+ was discussed in long after-glow crystals Y2O2S∶Eu.The difference in number of valence electron could cause the net charge effect of doping center.When the net charge was positive,the doping center acted as an electron trap.When the net charge was negative,the doping center acted as a hole trap.The relationship between potential well depth and trapping radius of alkalineearth metal ions M2+and Ti4+ doping centers was obtained with variational principle of quantum mechanics.The effective trapping radius of 0.117 nm for hole trap and 0.071 nm electron trap + were estimated by the obtained conclusion.
【Key words】 variational principle; doping center; trap depth; trapping radius;
- 【文献出处】 半导体技术 ,Semiconductor Technology , 编辑部邮箱 ,2008年10期
- 【分类号】TB34
- 【被引频次】2
- 【下载频次】126