【摘要】 将Si片经Secco腐蚀液腐蚀,用光学显微镜和原子力显微镜(AFM)对CZ-Si单晶中的流动图形缺陷(FPD)的形貌、分布及结构进行了研究,对Si片进行了湿氧化处理并采用较新的快速退火方法(RTA),在Ar气氛下对Si片进行热处理,研究了退火温度和退火时间对FPD缺陷密度的影响。结果表明,FPDs缺陷在1100℃以下非常稳定;但是在1100℃以上的温度,尤其在1200℃对Si片进行RTA处理后,Si片中FPD的密度大大降低,而且随着的退火时间的延长,密度不断下降。更多还原

【Abstract】 The feature,distribution and structure of flow pattern defects (FPD) in CZ-Si crystals observed by optical microscopy and atomic force microscopy and the influence of rapid thermal annealing method (RTA) in Ar atmosphere on the density of FPD were investigated.The results showed that FPD was very stable under 1 100 ℃ but the density was decreased deeply above 1 100 ℃ (especially at 1 200 ℃)by the RTA processing,and the longer the annealing time was,the lower the FPD density was.更多还原