【摘要】 用化学气相淀积方法在Si(100)衬底上制备Si缓冲层,继而外延生长Ge组分渐变的Si1-xGex∶C合金薄膜。研究表明,较低的Si缓冲层或Si1-xGex∶C外延层生长温度均不利于获得理想的Si1-xGex∶C合金薄膜,仅在Si缓冲层和Si1-xGex∶C外延层的生长温度均为750℃时可以获得质量较高、组分均匀的Si1-xGex∶C合金薄膜。本文通过对材料结构及表面形貌的分析研究了缓冲层和外延层的生长温度对Si1-xGex∶C合金薄膜性质的影响。更多还原

【Abstract】 Si buffers and then Ge graded Si1-xGex∶Calloy films were deposited on p-Si (100) substrates by chemical vapor deposition (CVD) method.The results showed that the lower growth temperature of Si buffers and/or epitaxial Si1-xGex∶Clayers leads to worse crystal structure and surface morphology of the alloy films.The ideal growth temperature of buffers and alloy films,for Si1-xGex∶C alloy with better quality and more uniform distribution,is 750 ℃.The effects of the growth temperature of buffers and/or epitaxial alloy films on the properties of Si1-xGex∶Calloy films have been discussed by the analysis of epitaxial film structure and surface morphology.更多还原