【摘要】 用化学气相沉积方法对Si(111)衬底进行碳化处理,继而生长SiC外延层和应变Si薄膜。结果表明:随着碳化温度的降低,SiC薄层与Si衬底界面处的空洞有逐渐变小的趋势;在1100℃进行碳化处理可以有效减少界面处的空洞,得到较平整的SiC薄层,在此条件下外延生长了高质量的SiC薄膜。在该SiC薄膜上外延获得了具有单一晶向的应变Si薄膜,其霍尔迁移率明显高于相同掺杂浓度的体Si材料,电学性能得到了有效改善。更多还原

【Abstract】 The carbonized layer,SiC buffer and strained Si film have been grown on Si substrates by a low-pressure chemical vapor deposition(LPCVD) system.Si substrates were carbonized by C2H4 prior to the SiC growth.The crystal quality of the carbonized layer at 1100 ℃ is the best.Following the carbonization process,SiH4 and C2H4 were supplied into the reaction tube to grow a single-crystal SiC film.SiH4 was supplied into the reaction tube to grow a single-crystal Si film.The crystal quality of the layer is characterized by X-ray diffraction and Raman spectroscopy.The results indicated that the epitaxial Si film is strained.A high Hall mobility value is obtained in the strained Si film,due to the compressive biaxial strain in this film.更多还原